A 20 MHz BP-PWM and BP-DSM Class-D PA in 0.18 μm CMOS

نویسندگان

  • Johan Sommarek
  • Ville Saari
  • Jonne Lindeberg
  • Jouko Vankka
  • Kari Halonen
چکیده

This paper presents a Class-D power amplifier for bandpass pulse width modulated (BP-PWM) and bandpass deltasigma modulated (BP-DSM) signals at 20 MHz. A 1-bit 6-th order topology is used in the ∆Σ-modulator. Integral noise shaping is used in the generation of the bandpass pulse width modulated signal. A two sided pulse width modulation is used with a 6-bit 4th-order noise shaper. The push-pull amplifier part of the Class-D amplifier was fabricated on a 0.18 μm CMOS process and the bandpass filter was composed of a LC ladder network realised with discrete components.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A +32 dBm 1.85 GHz class-D outphasing RF PA in 130nm CMOS for WCDMA/LTE

This paper presents a Class-D outphasing RF Power Amplifier (PA) which can operate at a 5.5 V supply and deliver +32 dBm at 1.85 GHz in a standard 130nm CMOS technology. The PA utilizes four on-chip transformers to combine the outputs of eight Class-D stages. The Class-D stages utilize a cascode configuration, driven by an AC-coupled low-voltage driver, to allow a 5.5 V supply in the 1.2/2.5 V ...

متن کامل

A selectable - bandwidth 3 . 5 mW , 0 . 03 mm 2 self - oscillating Sigma Delta modulator with 71 dB dynamic range at 5 MHz and 65 dB at 10 MHz

In this paper we present a dual-mode thirdorder continuous time Σ∆ modulator that combines noise-shaping and pulse-width-modulation (PWM). In our 0.18 μm CMOS prototype chip the clock frequency equals 1GHz, but the PWM carrier is only around 125 MHz. By adjusting the loop filter, the ADC bandwidth can be set to 5 or 10 MHz. In the 5 MHz mode the peak SNDR equals 64dB and the dynamic range 71dB....

متن کامل

A 2.45 GHz 30dBm differential 0.18 μm CMOS class-E power amplifier with 42% PAE

This paper presents a 30dBm (1W) class-E power amplifier projected in a standard 0.18-μm CMOS technology. The power amplifier (PA) consists in two differentials stages. The main stage employs a cascode class-E RF power amplifier with a self-biasing circuit. The driver stage uses the technique of Injection-Locking to substantially reduce the input power signal, maintaining a high gain. At 2.45 G...

متن کامل

A Hysteretic Two-phase Supply Modulator for Envelope Tracking RF Power Amplifiers

In this paper a two-phase supply modulator suitable for envelope tracking power amplifier is presented. The designed supply modulator has the linear assisted switching architecture. Two-phase architecture is used in order to reduce the output switching ripples. The proposed architecture uses hysteretic control instead of pulse width modulation (PWM) which significantly reduces the circuit compl...

متن کامل

A Design Strategy for a 1-V Rail-to-Rail Input/Output CMOS Operational Amplifier in Standard CMOS Technology

A design strategy for a rail-to-rail input / output operational amplifier in standard CMOS 0.18 μm digital process with a 0.5-V threshold is presented. It uses a novel level shifting technique of the input signal and a dynamically biased class AB output stage based on a switched-capacitor configuration. The amplifier is capable of working with a power supply as low as 1-V while providing a 26.6...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005